| 摘要 |
A semiconductor device structure and a manufacturing method thereof are provided. The method includes: forming gate lines (3005) on a semiconductor substrate (3000); forming gate sidewalls (3006) around the gate lines; forming source/drain regions (3007) embedded into the semiconductor substrate on both sides of the gate lines; forming conductive sidewalls (3009) around the gate sidewalls; and cutting off the gate lines, the gate sidewalls and the conductive sidewalls in predetermined regions. The cut gate lines form gate electrodes (3011) being electrically isolated, and the cut conductive sidewalls form the subjacent contact portions (3012) being electrically isolated. The semiconductor device structure is suitable for fabrication of the contact portion of the integrated circuit. |
