BULK-EFFECT SEMICONDUCTOR DEVICES AND CIRCUITS THEREFOR

摘要

A wafer of bulk-effect material includes a first region contained between a first cathode and first anode and a second region contained between a second cathode and a second anode. The first and second cathodes and first and second anodes are resistively connected. A bias voltage nucleates a traveling electric field domain at the first cathode which, as it propagates in the first region, passes the second cathode where it nucleates a second domain in the second region. The output to the external circuit then has two frequency components derived from the first and second anodes.