| 摘要 |
<p>1313342 Welding by pressure GENERAL ELECTRIC CO 19 June 1970 [23 June 1969] 29980/70 Heading B3R [Also in Division H1] An apparatus for eutectically bonding a semi-conductor chip 25 to a gold pad 23 on a substrate 22 comprises a stage 11 supporting the substrate, an apertured plate 14 which positions the substrate correctly over the aperture 12 in the stage, a cover-plate 16 with channels 18 which conduct inert gas to the bonding area, a heated collet 24 for positioning the semi-conductor chip on the gold pad, a heater plate 21 and a heater filament 28a positioned in the aperture 12 in the stage. The bonding is carried out by heating the heater plate to the required temperature, supplying inert gas to the bonding area, positioning the substrate with its gold pad over the apertures in the stage, placing the semi-conductor chip on to the gold pad and pressing it thereon by means of the collet, supplying power to the filament 28a via wires 29 to locally heat the chip and pad to the required temperature, and retaining it for a time at this temperature, then finally ultrasonically vibrating the chip to ensure good alloying. Alternatively local heating can be supplied by an R.F. heater, Fig. 4, not shown. In either case the heating is restricted to the immediate area to which the bond is to be made.</p> |
