发明名称 |
CONSTRAINMENT OF AUTODOPING IN EPITAXIAL DEPOSITION |
摘要 |
Autodoping is minimized during epitaxial deposition by sputtering a primary or initial film on a doped semiconductor substrate prior to epitaxial deposition.
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申请公布号 |
US3660180(A) |
申请公布日期 |
1972.05.02 |
申请号 |
USD3660180 |
申请日期 |
1969.02.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP. |
发明人 |
EDWARD S. WAJDA |
分类号 |
C30B25/02;H01L21/00;H01L21/20;H01L21/205;(IPC1-7):H01L7/36;C23C11/00;H01L5/00 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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