| 摘要 |
A high power frequency device such as a thyristor or transistor comprises a monolithic body consisting of an emitter assemblage laminated to a base-collector assemblage. The emitter assemblage is a semiconductive wafer of given conductivity type having a plurality of mesas adjacent one surface; a high resistivity ballast layer in each mesa; an insulating film on said one surface and around each mesa; and a layer of high conductivity material, such as heavily doped semiconductive material of opposite conductivity type, on said insulating film over said one surface and surrounding said mesas, the surface of said high conductivity layer being co-planar with the top of said mesas. The base-collector assemblage is a semiconductive wafer which includes at least two layers of mutually opposite conductivity types, the surface of one layer being planar and constituting a major surface of said body.
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