| 摘要 |
<p>To produce a memory which resists ion or photon attack, a memory structure is chosen whose memory point behaves asymmetrically with regard to these attacks. It is shown that in this case, it is sufficient to have a reference cell for an identical and periodic storage structure in order to be able to correct all the memory cells assailed by an attack. An error correction efficiency of ½ is thus obtained, with a simple redundancy, whereas the conventional methods make provision, for the same result, to triple the storage, to obtain a less beneficial efficiency of⅓.</p> |
