发明名称 |
PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER |
摘要 |
A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps: (1) printing and drying a metal paste A comprising an inorganic content comprising 0.5 to 8 wt.-% of glass frit and having fire-through capability, wherein the metal paste A is printed on the ARC layer in a grid pattern which comprises (i) thin parallel finger lines forming a bottom set of finger lines and (ii) busbars intersecting the finger lines at right angle, (2) printing and drying a metal paste B comprising an inorganic content comprising 0 to 3 wt.-% of glass frit over the bottom set of finger lines to form a top set of finger lines superimposing the bottom set of finger lines, and (3) firing the double-printed silicon wafer, wherein the inorganic content of metal paste B contains less glass frit plus optionally present other inorganic additives than the inorganic content of metal paste A. |
申请公布号 |
EP2433305(A1) |
申请公布日期 |
2012.03.28 |
申请号 |
EP20100722878 |
申请日期 |
2010.05.20 |
申请人 |
E. I. DU PONT DE NEMOURS AND COMPANY |
发明人 |
ANDERSON, DAVID KENT;ANDERSON, RUSSELL DAVID;LAUDISIO, GIOVANNA;LIN, CHENG-NAN;KAO, SHIH-MING;WU, CHUN-KWEI |
分类号 |
H01L31/0224;H01B1/16 |
主分类号 |
H01L31/0224 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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