发明名称 |
SOLID-STATE IMAGE PICKUP DEVICE |
摘要 |
<p>PURPOSE: A solid state image pickup device is provided to miniaturize a pixel size by forming a channel part of a charge readout transistor on a surface of a semiconductor substrate at a depth direction. CONSTITUTION: A solid state image pickup device includes a pixel(20) and a semiconductor substrate(2). The pixel is composed of a photo diode(3) and a charge readout transistor. The charge readout transistor reads out a signal charge from the photo diode. The pixel is formed on the semiconductor substrate. A P-N junction part formed between high concentration regions of the photo diode is formed inside the semiconductor substrate. A part of the P-N junction part of the photo diode is formed to be extended to a lower part of a transistor which is formed on a surface of the semiconductor substrate.</p> |
申请公布号 |
KR20120030511(A) |
申请公布日期 |
2012.03.28 |
申请号 |
KR20120021128 |
申请日期 |
2012.02.29 |
申请人 |
SONY CORPORATION |
发明人 |
EZAKI TAKAYUKI;HIRAYAMA TERUO |
分类号 |
H01L27/146;H04N5/335;H04N5/355;H04N5/369;H04N5/374 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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