| 发明名称 |
SILICON NITRIDE DIFFUSION BARRIER LAYER FOR CADMIUM STANNATE TCO |
| 摘要 |
<p>A photovoltaic device can include a transparent conductive oxide layer adjacent to a substrate and a barrier layer, which can include a silicon-containing material.</p> |
| 申请公布号 |
EP2433308(A1) |
申请公布日期 |
2012.03.28 |
| 申请号 |
EP20100778121 |
申请日期 |
2010.05.12 |
| 申请人 |
FIRST SOLAR, INC |
发明人 |
MILLS, SCOTT;ROBERTS, DALE;ZHAO, ZHIBO;YANG, YU |
| 分类号 |
H01L31/0264;H01L31/0224;H01L31/0296;H01L31/18 |
主分类号 |
H01L31/0264 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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