发明名称 |
PATTERNING LAYERS COMPRISED OF SPIN-ON CERAMIC FILMS |
摘要 |
<p>The present invention comprises a method for forming a hardmask including the steps of depositing a polymeric preceramic precursor film atop a substrate; converting the polymeric preceramic precursor film into at least one ceramic layer, where the ceramic layer has a composition of SivNwCxOyHz where 0.1<=v<=0.9, 0<=w<=0.5, 0.05<=x<=0.9, 0<=y<=0.5, 0.05<=z<=0.8 for v+w+x+y+z=1; forming a patterned photoresist atop the ceramic layer; patterning the ceramic layer to expose regions of the underlying substrate, where a remaining region of the underlying substrate is protected by the patterned ceramic layer; and etching the exposed region of the underlying substrate. Another aspect of the present invention is a buried etch stop layer having a composition of SivNwCxOyHz where 0.05<v<0.8, 0<w<0.9, 0.05<x<0.8, 0<y<0.8, 0.05<z<0.8 for v+w+x+y+z=1.</p> |
申请公布号 |
EP1595276(A4) |
申请公布日期 |
2012.03.28 |
申请号 |
EP20040705307 |
申请日期 |
2004.01.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GATES, STEPHEN, M.;HEDRICK, JEFFREY, C.;HUANG, ELBERT, E.;PFEIFFER, DIRK |
分类号 |
G03G13/06;H01L;H01L21/00;H01L21/311;H01L21/312;H01L21/316;H01L21/44;H01L23/48;H05B6/64;(IPC1-7):H01L21/00 |
主分类号 |
G03G13/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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