METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce parasitic capacitance by forming an insulation layer with an air gap between gate structures. CONSTITUTION: A capping layer is formed on a part of a sidewall of a preliminary gate structure. A conductive layer is formed on a part of preliminary gate structures which are not covered with a capping film pattern. Gate structures(242,244,246,248) are formed by reacting the conductive layer with the preliminary gate structures. A second insulation layer(260) is formed on the substrate between the gate structures. The second insulation layer has an air gap.