发明名称 Programming a flash memory device
摘要 An initial verify read operation is performed after each programming pulse. The verify voltage starts at an initial verify voltage for the first word line and increases for each word line that is verified up to a maximum verify voltage. A second verify read operation is then performed after the program/verify operation. The second verify read operation uses a verify voltage that is substantially close to the maximum verify voltage used during the program/verify step.
申请公布号 US8144519(B2) 申请公布日期 2012.03.27
申请号 US20100973110 申请日期 2010.12.20
申请人 ARITOME SEIICHI 发明人 ARITOME SEIICHI
分类号 G11C16/06 主分类号 G11C16/06
代理机构 代理人
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