发明名称 |
Method for manufacturing semiconductor device |
摘要 |
A method of manufacturing a semiconductor device, including: forming a moisture resistant ring surrounding a multilayer interconnection structure in a layered body formed of stacked layers of a plurality of interlayer insulating films lower in dielectric constant than a SiO2 film and including the multilayer interconnection structure; forming a groove in the layered body between the moisture resistant ring and a scribe line, the groove reaching a surface of a semiconductor substrate; forming a film including Si and C as principal components and covering sidewall surfaces and a bottom surface of the groove; and forming a protection film on the film along the sidewall surfaces and the bottom surface of the groove. |
申请公布号 |
US8143153(B2) |
申请公布日期 |
2012.03.27 |
申请号 |
US201113075463 |
申请日期 |
2011.03.30 |
申请人 |
WATANABE KENICHI;MISAWA NOBUHIRO;OTSUKA SATOSHI;FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
WATANABE KENICHI;MISAWA NOBUHIRO;OTSUKA SATOSHI |
分类号 |
H01L21/44;H01L21/311;H01L21/4763 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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