| 摘要 |
To provide a semiconductor device and a method of making the same, the device being capable of preventing decrease in the withstanding voltage along the direction perpendicular to the source-drain direction and thereby improving the resistance to an overvoltage (overcurrent), the device includes: a p-type semiconductor substrate 201; an n-type diffusion region 202; a p-type body region 206, a p-type buried diffusion region 204, and an n-type drift region 207 within the n-type diffusion region 202; an n-type source region 208 and a p-type body contact region 209 within the p-type body region 206; an n-type drain region 210 within the n-type drift region 207; a gate insulating film above the p-type body region 206; and a gate electrode 211 above the gate insulating film, where the region 204 extends away from the region 206 farther than the farther edge of the gate electrode 211 is along a cross section perpendicular to the source-drain direction. |
