发明名称 |
GaN compound semiconductor light emitting element and method of manufacturing the same |
摘要 |
The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact. Furthermore, a P-type electrode is partially formed on a P-GaN layer in a mesh form to thereby maximize the emission of photons generated in the active layer toward the N-GaN layer. |
申请公布号 |
US8143640(B2) |
申请公布日期 |
2012.03.27 |
申请号 |
US201113192848 |
申请日期 |
2011.07.28 |
申请人 |
LEE JONG LAM;SEOUL OPTO DEVICE CO., LTD.;POSTECH FOUNDATION |
发明人 |
LEE JONG LAM |
分类号 |
H01L33/00;H01L33/10;H01L33/32;H01L33/38;H01L33/40;H01L33/44 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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