发明名称 |
Fabrication of interconnects in a low-k interlayer dielectrics |
摘要 |
A method for forming deep lithographic interconnects between a first metal and a second metal is provided. The method comprises depositing a first insulator layer on a semiconductor substrate; etching the first insulator layer at a selected location to provide at least a first via to the semiconductor substrate; depositing the first metal on the semiconductor substrate to form at least a first metal contact plug in the first via in contact with the semiconductor substrate; treating the semiconductor substrate with an in-situ plasma of a nitrogen containing gas wherein the plasma forms a nitride layer of the first metal at least capping a top surface of the first metal plug in the first via; and forming a second metal contact to the metal nitride layer capping at least the top surface of the first metal plug. |
申请公布号 |
US8143159(B2) |
申请公布日期 |
2012.03.27 |
申请号 |
US20100807613 |
申请日期 |
2010.09.09 |
申请人 |
KING SEAN;BRAIN RUTH;INTEL CORPORATION |
发明人 |
KING SEAN;BRAIN RUTH |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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