发明名称 |
Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same |
摘要 |
There is provided a method of producing a thin GaN film-joined substrate, including the steps of: joining on a GaN bulk crystalline body a substrate different in type or chemical composition from GaN; and dividing the GaN bulk crystalline body at a plane having a distance of at least 0.1 μm and at most 100 μm from an interface thereof with the substrate different in type, to provide a thin film of GaN on the substrate different in type, wherein the GaN bulk crystalline body had a surface joined to the substrate different in type, that has a maximum surface roughness Rmax of at most 20 μm. Thus a GaN-based semiconductor device including a thin GaN film-joined substrate including a substrate different in type and a thin film of GaN joined firmly on the substrate different in type, and at least one GaN-based semiconductor layer deposited on the thin film of GaN, can be fabricated at low cost. |
申请公布号 |
US8143140(B2) |
申请公布日期 |
2012.03.27 |
申请号 |
US20100765357 |
申请日期 |
2010.04.22 |
申请人 |
KASAI HITOSHI;HACHIGO AKIHIRO;MIURA YOSHIKI;AKITA KATSUSHI;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
KASAI HITOSHI;HACHIGO AKIHIRO;MIURA YOSHIKI;AKITA KATSUSHI |
分类号 |
H01L21/30;H01L21/46;H01L33/06;H01L33/32 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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