发明名称 Positive resist composition and pattern forming method using the same
摘要 A positive resist composition, includes: (B1) a resin capable of decomposing under an action of an acid to increase a solubility of the resin (B1) in an aqueous alkali solution, the resin (B1) containing a specific hydroxystyrene-based repeating unit and/or (meth)acrylic acid-based repeating unit as defined in the specification; (B2) a resin capable of decomposing under an action of an acid to increase a solubility of the resin (B2) in an aqueous alkali solution, the resin (B2) containing a specific hydroxystyrene-based repeating unit and/or (meth)acrylic acid-based repeating unit as defined in the specification and containing a specific aromatic ring structure-containing repeating unit as defined in the specification; and (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and a pattern forming method uses the composition.
申请公布号 US8142977(B2) 申请公布日期 2012.03.27
申请号 US20080057441 申请日期 2008.03.28
申请人 MIZUTANI KAZUYOSHI;SUGIYAMA SHINICHI;FUJIFILM CORPORATION 发明人 MIZUTANI KAZUYOSHI;SUGIYAMA SHINICHI
分类号 G03F7/004;G03F7/028;G03F7/039 主分类号 G03F7/004
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