发明名称 |
Positive resist composition and pattern forming method using the same |
摘要 |
A positive resist composition, includes: (B1) a resin capable of decomposing under an action of an acid to increase a solubility of the resin (B1) in an aqueous alkali solution, the resin (B1) containing a specific hydroxystyrene-based repeating unit and/or (meth)acrylic acid-based repeating unit as defined in the specification; (B2) a resin capable of decomposing under an action of an acid to increase a solubility of the resin (B2) in an aqueous alkali solution, the resin (B2) containing a specific hydroxystyrene-based repeating unit and/or (meth)acrylic acid-based repeating unit as defined in the specification and containing a specific aromatic ring structure-containing repeating unit as defined in the specification; and (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and a pattern forming method uses the composition. |
申请公布号 |
US8142977(B2) |
申请公布日期 |
2012.03.27 |
申请号 |
US20080057441 |
申请日期 |
2008.03.28 |
申请人 |
MIZUTANI KAZUYOSHI;SUGIYAMA SHINICHI;FUJIFILM CORPORATION |
发明人 |
MIZUTANI KAZUYOSHI;SUGIYAMA SHINICHI |
分类号 |
G03F7/004;G03F7/028;G03F7/039 |
主分类号 |
G03F7/004 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|