发明名称 |
THIN FILM DEPOSITION APPARATUS |
摘要 |
PURPOSE: A thin film depositing apparatus is provided to prevent the reaction of a first source gas and a second source gas in a gas inlet by spraying a first additional gas between the first source gas and the second source gas. CONSTITUTION: A gas supply unit(130) is installed in the upper center of a susceptor. The gas supply unit includes a first source gas spray unit(141), a second source gas spray unit(142), and a first additional gas spray unit(143). The first source gas spray unit receives the first source gas from the outside of a chamber and sprays the first source gas to the upper side of the susceptor. A second source gas spray unit is arranged on the lower side of the first source gas spray unit. The first additional gas spray unit is arranged between the first and second source gas spray units.
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申请公布号 |
KR20120029796(A) |
申请公布日期 |
2012.03.27 |
申请号 |
KR20100091854 |
申请日期 |
2010.09.17 |
申请人 |
WONIK IPS CO., LTD. |
发明人 |
CHOI, SUNG MIN;JANG, WOOK SANG;LEE, WOO SUNG |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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