| 摘要 |
A problem of an increased manufacturing cost is caused in conventional semiconductor devices. A semiconductor device 1 includes: a lower electrode 102 provided on a semiconductor substrate 101; an insulating film 105, provided on the lower electrode 102 so as to be in contact with the lower electrode 102; an upper electrode 103, provided on the insulating film 105 so as to be in contact with the insulating film 105; an opening portion 121, provided in the lower electrode 102 and extending through the lower electrode 102; and an opening portion 122, provided in the upper electrode 103 and extending through the upper electrode 103. The insulating film 123 is embedded in the opening portion 121 that is provided in the lower electrode 102. Similarly, the insulating film 124 is embedded in the opening portion 122 that is provided in the upper electrode 103. |
