| 摘要 |
1276739 Semi-conductor devices FAIRCHILD CAMERA & INSTRUMENT CORP 25 Aug 1969 [3 Sept 1988] 42322/69 Heading H1K A solder bump on a conducting layer 13, e.g. of Al, on a "flip-chip" integrated circuit wafer 11 comprises a thick conductive layer 15, e.g. again of Al, on the layer 13, a diffusion barrier layer of Ni which may comprise a first vacuum deposited layer 16 covered by an electrodeposited layer 18, and a series of layers of solder constituents. As shown the solder constituents comprise layers 19 and 21 of Au and an intermediate layer 20 of Sn, all of which layers are electrodeposited or vacuum deposited. Alternative solder constituents are Au/Ge, Pb/Sn/Au, Au/In/Au or Zn/Au. The Al and Ni layer 15, 16 initially comprise part of a continuous layer on to which the remaining layers 18-21 are deposited through a photo-resist mask. A detailed predeposition cleaning process for the Ni layer 16 is described. |
