THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A three dimensional semiconductor is provided to stably etch a sacrificial layer by supporting a main structure with an isolation pattern. CONSTITUTION: An electrode structure is defined by a sidewall of buried insulation layers(250). A first row and a second row of vertical structures are provided between adjacent insulation layers. The first row and the second row of the vertical structures pass through the electrode structure. A separation pattern(190) is provided between the first row and the second row and includes a semiconductor isolation layer. The separation pattern is extended along the first row and the second row.