| 摘要 |
<p>PURPOSE: A switching device and a memory device including the same are provided to reduce an off-current while multiplying an on-current by including a bipolar tunneling film in which a plurality of insulating layers having different dielectric constants is laminated. CONSTITUTION: A bipolar tunneling film(12) is composed of insulating layers. The insulating layers has different dielectric constants on a first electrode(11). A second electrode(13) is formed on the bipolar tunneling film. A first insulating layer, a second insulating layer, and a third insulating layer are successively laminated on the bipolar tunneling film. The dielectric constant of the second insulating layer is bigger than the dielectric constant of the first insulating layer and the third insulating layer. The thickness of the first insulating layer and the third insulating layer is thicker than the thickness of the second insulating layer.</p> |
