<p>PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the property deterioration of the semiconductor device by omitting a selective epitaxial growth. CONSTITUTION: A substrate(100) defining a memory region and a logic region is prepared. A dummy gate pattern(110) is formed in the memory region. A first region(105) with a first conductive type is formed in one region of the dummy gate pattern. A second region(107) with a second conductive type is formed on the other region of the dummy gate pattern. A nonvolatile memory device is electrically connected to the first region.</p>
