发明名称 |
Self-align planerized bottom electrode phase change memory and manufacturing method |
摘要 |
A method is described for self-aligning a bottom electrode in a phase change random access memory PCRAM device where a top electrode serves as a mask for self-aligning etching of the bottom electrode. The bottom electrode has a top surface that is planarized by chemical mechanical polishing. The top electrode also has a top surface that is planarized by chemical mechanical polishing. A bottom electrode layer like TiN is formed over a substrate and prior to the formation of a via during subsequent process steps. A first dielectric layer is formed over the bottom electrode layer, and a second dielectric layer is formed over the first dielectric layer. A via is formed at a selected section that extends through the first and second dielectric layers.
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申请公布号 |
US8143089(B2) |
申请公布日期 |
2012.03.27 |
申请号 |
US20100899991 |
申请日期 |
2010.10.07 |
申请人 |
LUNG HSIANG-LAN;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUNG HSIANG-LAN |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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