发明名称 |
Contact fuse one time programmable memory |
摘要 |
A fuse structure for a semiconductor integrated circuit (IC) can include a first node comprising a region of a metal layer of an IC manufacturing process and a second node comprising a region of a conductive layer residing on a layer of the IC manufacturing process below the metal layer of the first node. The fuse structure can include a fuse link comprising a conductive material, positioned substantially perpendicular to each of the metal and conductive layers. An upper end of the fuse link couples to the first node and a lower end of the fuse link, that is distal to the upper end, couples to the second node. |
申请公布号 |
US8143695(B1) |
申请公布日期 |
2012.03.27 |
申请号 |
US20090509301 |
申请日期 |
2009.07.24 |
申请人 |
ANG BOON Y.;TUMAKHA SERHII;GHIA AMIT;XILINX, INC. |
发明人 |
ANG BOON Y.;TUMAKHA SERHII;GHIA AMIT |
分类号 |
H01L23/52 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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