发明名称 Contact fuse one time programmable memory
摘要 A fuse structure for a semiconductor integrated circuit (IC) can include a first node comprising a region of a metal layer of an IC manufacturing process and a second node comprising a region of a conductive layer residing on a layer of the IC manufacturing process below the metal layer of the first node. The fuse structure can include a fuse link comprising a conductive material, positioned substantially perpendicular to each of the metal and conductive layers. An upper end of the fuse link couples to the first node and a lower end of the fuse link, that is distal to the upper end, couples to the second node.
申请公布号 US8143695(B1) 申请公布日期 2012.03.27
申请号 US20090509301 申请日期 2009.07.24
申请人 ANG BOON Y.;TUMAKHA SERHII;GHIA AMIT;XILINX, INC. 发明人 ANG BOON Y.;TUMAKHA SERHII;GHIA AMIT
分类号 H01L23/52 主分类号 H01L23/52
代理机构 代理人
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