Semiconductor device having a high-dielectric-constant gate insulating film

摘要

A semiconductor device includes a substrate having first and second regions on a surface thereof, a first conductivity type first MISFET formed in the first region and a second conductivity type second MISFET formed in the second region. The first MISFET includes a silicon oxide film or a silicon oxynitride film formed on the surface of the substrate and a first insulating film which is formed in contact with the silicon oxide film or the silicon oxynitride film and which has a first element forming electric dipoles that reduce a threshold voltage of the first MISFET and the second MISFET includes a silicon oxide film or a silicon oxynitride film formed on the surface of the substrate, and a second insulating film which is formed in contact with the silicon oxide film or the silicon oxynitride film formed on the surface of the substrate and which has a second element forming electric dipoles in a direction opposite to that in the first MISFET.