| 摘要 |
<p>PURPOSE: A semiconductor device and a forming method thereof are provided to prevent a short between a gate and a metal contact plug by etching a region between a dummy gate and an operation gate with a self-alignment method. CONSTITUTION: A semiconductor substrate includes an active region(104) defined by a device isolation layer. An operation gate(106R) is formed on the upper side of the active region. A dummy gate(106D) is formed on the upper side of the device isolation layer. A metal contact hole is defined by an interlayer dielectric pattern(110a). The interlayer dielectric pattern exposes adjacent active regions while the device isolation layer is interposed.</p> |
