发明名称 Silicon monoxide vapor deposition material and process for producing the same
摘要 In a powder-sintered type silicon monoxide based evaporating material which is used to form an evaporated film of silicon monoxide, the generation of splash is restrained. Material strength that can resist against the use of the material is ensured. In order to realize these, a starting powder made of precipitating SiO is sintered at 700 to 1000° C. to form an evaporating material. The precipitation of Si is restrained in the step of the sintering. In the measurement thereof by XRD, the peak strength P1 at a Si peak point generated near 2&thetas;=28° and the base strength P2 at the peak point expected from the average strength gradient before and after the peak point satisfies the following: P1/P2≦̸3. The compression fracture strength of the evaporating material after the material is sintered is raised to 5 MPa or more by selective use of precipitating SiO produced by a vacuum condensing machine.
申请公布号 US8142751(B2) 申请公布日期 2012.03.27
申请号 US20060916452 申请日期 2006.06.05
申请人 NATSUME YOSHITAKE;OSAKA TITANIUM TECHNOLOGIES CO., LTD. 发明人 NATSUME YOSHITAKE
分类号 C01B15/14;C01B33/20;C04B41/50 主分类号 C01B15/14
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