STRAINED SILICON MOS DEVICE WITH BOX LAYER BETWEEN THE SOURCE AND DRAIN REGIONS,申请号KR20087014260-传众专利搜索

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发明名称	STRAINED SILICON MOS DEVICE WITH BOX LAYER BETWEEN THE SOURCE AND DRAIN REGIONS
摘要
申请公布号	KR101124920(B1)	申请公布日期	2012.03.27
申请号	KR20087014260	申请日期	2006.12.06
申请人		发明人
分类号	H01L21/336;H01L29/78	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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