MANUFACTURING METHOD OF NITRIDE SINGLE CRYSTAL, SEMICONDUCTOR LIGHT EMITTING DEVIDE USING THE SAME, AND MANUFACTURING METHOD OF THE SAME

摘要

PURPOSE: A method for manufacturing a nitride mono-crystal, and a nitride semiconductor light emitting diode using the same are provided to control lattice defects created due to thermal expansion and lattice mismatch by forming a mask layer in the inner side of a semiconductor layer by using grapheme. CONSTITUTION: A first electrical conduction semiconductor layer(22) is formed on a substrate(21). The first electrical conduction semiconductor layer comprises a nitride base layer(22A) and a nitride single crystal layer(22B). An active layer(23) is formed on the first electrical conduction semiconductor layer. A second electrical conduction semiconductor layer(24) is formed on the active layer. A mask layer(25) is formed the nitride base layer and the nitride single crystal layer.