NITRIDE LIGHT EMITTING DEVICE

摘要

PURPOSE: A nitride semiconductor light emitting device is provided to realize light-emitting properties according to indium composition by controlling decomposition of a crystalline structure. CONSTITUTION: A first conductivity type nitride semiconductor layer(120) is formed on a substrate(110). An active layer(130) is formed on the first conductivity type nitride semiconductor layer. The active layer comprises a quantum barrier layer(131a), a quantum-well layer(132), and a capping layer(133). A graphene layer is placed in inside the quantum-well layer containing indium. A second conductive type nitride semiconductor layer(140) is formed on the active layer. An additional capping layer which does not include indium is formed on the upper side of the capping layer.