MANUFACTURING METHOD FOR NITRIDE SINGLE CRYSTAL AND NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE: A nitride mono-crystal and a method for manufacturing a nitride compound semiconductor light emitting device are provided to minimize the generation of defects of a light emitting structure by separating the light emitting structure from a nitride mono-crystal substrate for growth. CONSTITUTION: A nitride mono-crystal substrate(110) for growth is prepared. A graphene layer(120) is formed in the substrate. A light emitting structure in which a first conductivity type nitride semiconductor layer, an active layer, and a second conductive type nitride semiconductor layer are successively formed is grown up on the graphene layer. A first electrode layer is formed on the light emitting structure. The graphene layer is chemically eliminated by using etchant in order to separate the light emitting structure from the substrate.