METHOD FOR FORMING HEAT-RESISTANT MULTI-LAYER METALLIZATION OF SUBMICRON STRUCTURE OF LSI CIRCUITS

摘要

A method for forming a heat resistant multi-layer metallization of the upper level of interconnections of LSI circuits includes manufacturing structures with contact profile windows in interlayer metallization using the photolithography process and plasma etching; quality chemical processing of the structures in peroxide and ammonium mixture, magnetron sputtering a silicide or polycide target.