SEMICONDUCTOR LIGHT EMITTING DEVICE AND A METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to reduce electrode contact resistance by minimizing the thickness of a packed layer of the upper region of a nano rod. CONSTITUTION: A buffer layer(200) is arranged on a substrate(100). A first conductivity type semiconductor layer(300) is arranged on the buffer layer. A dielectric pattern(400) is formed on the first conductivity type semiconductor layer in order to expose a part of the first conductivity type semiconductor layer. A light emitting part a first conductivity type semiconductor layer core(510), an active layer shell(610), and a second conductivity type semiconductor layer shell(700). A packed layer(800) induces a flow of holes towards the active layer shell by being packed between the light emitting parts.