SEMICONDUCTOR LIGHT EMITTING DEVICE AND A METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to control luminous efficiency to be reduced by including an electron secluding layer including grapheme and secluding overflowing of an electron. CONSTITUTION: A first electrical conductive semiconductor layer(300) is formed on a substrate(100). A active layer(400) is formed on the first electrical conductive semiconductor layer. An electron secluding layer including grapheme is formed on the active layer. The thickness of the electron secluding layer is 10 to 200nm. A second electrical conductive semiconductor layer(600) is formed on the electron secluding layer. A transparent electrode(700) is formed on the second electrical conductive semiconductor layer. Band gap energy of the electron secluding layer is 4.1 to 5.2eV.