发明名称 TEST PATTERN OF MIM CAPACITOR
摘要 <p>A test pattern of an MIM(Metal-Insulator-Metal) capacitor is provided to accurately evaluating characteristics by using a testing single MIM capacitor and a testing array type MIM capacitor. A testing single MIM capacitor is formed on a wafer test region where a device is realized. A testing array type MIM capacitor has the same capacitor value as the testing single capacitor. An outer connecting terminal of a single capacitor via contact line is connected to an electrode of the testing single MIM capacitor. An outer connecting terminal of an array capacitor via contact line is connected to an electrode of the testing array MIM capacitor. The testing single MIM capacitor and the testing array type MIM capacitor are formed with the same depth as an operating MIM capacitor in the device.</p>
申请公布号 KR101128709(B1) 申请公布日期 2012.03.23
申请号 KR20050044581 申请日期 2005.05.26
申请人 发明人
分类号 H01L21/66 主分类号 H01L21/66
代理机构 代理人
主权项
地址