| 摘要 |
<p>PURPOSE: A manufacturing method of a semiconductor memory device is provided to improve more a degree of integration of the semiconductor memory device by forming an information storage device on the upper/lower or the sidewall of a switching element. CONSTITUTION: A first information storage device is formed on a first semiconductor substrate(100). A switching device is formed on the first information storage devices. A second information storage device is formed on the switching devices. A first electrode(132) connected with the switching device is formed. A second electrode(134) is formed on the first electrode. A logic device electrically connected with the switching device is formed on the lower part of the first information storage device.</p> |
