| 摘要 |
Disclosed are a unit cell capable of improving a reliability by enhancing a data sensing margin in a read operation, and a nonvolatile memory device with the same. The unit cell of a nonvolatile memory device includes: an antifuse (ANT_FS) having a first terminal between an input terminal and an output terminal; and a first switching unit (SW) coupled between a second terminal of the antifuse and a ground voltage terminal (D).
|
