| 摘要 |
PURPOSE: A light emitting device is provided to prevent micro cracking on a passivation layer by forming a protective layer on a side of a nitride semiconductor with a material having higher density than silicon oxide or aluminum oxide. CONSTITUTION: A light emitting structure(110) comprises a second conductive semiconductor layer(112), an active layer(114), and a first conductive semiconductor layer(116). A protective layer(150) is formed on all sides of a light emitting structure. A passivation layer(200) is formed around the protective layer. A second electrode layer(160) is formed on the light emitting structure. The second electrode layer comprises an ohmic layer(162), a reflecting layer(164), and a bonding layer(166). |
