METHODS OF FORMING INTEGRATED CIRCUITS

摘要

A method of forming an integrated circuit includes forming a gate structure over a substrate. At least one silicon-containing layer is formed in source/drain (S/D) regions adjacent to sidewalls of the gate structure. An N-type doped silicon-containing layer is formed over the at least one silicon-containing layer. The N-type doped silicon-containing layer has an N-type dopant concentration higher than that of the at least one silicon-containing layer. The N-type doped silicon-containing layer is annealed so as to drive N-type dopants of the N-type doped silicon-containing layer to the S/D regions.