发明名称 |
Method of forming fine pattern |
摘要 |
A method of forming a fine pattern according to an embodiment includes: forming a hard mask on a substrate; forming a mask reinforcing member on the hard mask; forming a di-block copolymer layer on the mask reinforcing member, the di-block copolymer layer comprising a sea-island structure; forming a pattern comprising a concave-convex structure in the di-block copolymer layer, with island portions of the sea-island structure being convex portions; and transferring the pattern onto the hard mask by performing etching on the mask reinforcing member and the hard mask, with a mask being the pattern formed in the di-block copolymer layer. The mask reinforcing member is comprised of a material having an etching speed that is higher than an etching speed for the hard mask and is lower than an etching speed for sea portions of the sea-island structure of the di-block copolymer layer.
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申请公布号 |
US2012067843(A1) |
申请公布日期 |
2012.03.22 |
申请号 |
US201113064301 |
申请日期 |
2011.03.16 |
申请人 |
WATANABE AKIRA;KIMURA KAORI;ISOWAKI YOUSUKE;KAMATA YOSHIYUKI;KIHARA NAOKO;KIKITSU AKIRA;KABUSHIKI KAISHA TOSHIBA |
发明人 |
WATANABE AKIRA;KIMURA KAORI;ISOWAKI YOUSUKE;KAMATA YOSHIYUKI;KIHARA NAOKO;KIKITSU AKIRA |
分类号 |
C23F1/02 |
主分类号 |
C23F1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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