发明名称 Method of forming fine pattern
摘要 A method of forming a fine pattern according to an embodiment includes: forming a hard mask on a substrate; forming a mask reinforcing member on the hard mask; forming a di-block copolymer layer on the mask reinforcing member, the di-block copolymer layer comprising a sea-island structure; forming a pattern comprising a concave-convex structure in the di-block copolymer layer, with island portions of the sea-island structure being convex portions; and transferring the pattern onto the hard mask by performing etching on the mask reinforcing member and the hard mask, with a mask being the pattern formed in the di-block copolymer layer. The mask reinforcing member is comprised of a material having an etching speed that is higher than an etching speed for the hard mask and is lower than an etching speed for sea portions of the sea-island structure of the di-block copolymer layer.
申请公布号 US2012067843(A1) 申请公布日期 2012.03.22
申请号 US201113064301 申请日期 2011.03.16
申请人 WATANABE AKIRA;KIMURA KAORI;ISOWAKI YOUSUKE;KAMATA YOSHIYUKI;KIHARA NAOKO;KIKITSU AKIRA;KABUSHIKI KAISHA TOSHIBA 发明人 WATANABE AKIRA;KIMURA KAORI;ISOWAKI YOUSUKE;KAMATA YOSHIYUKI;KIHARA NAOKO;KIKITSU AKIRA
分类号 C23F1/02 主分类号 C23F1/02
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