| 摘要 |
<p>This method prevents warping of a developed pattern resulting from overexposure at the adjoining portions of adjacent exposed regions resulting from repeated exposure of a resist film when forming an etching mask, which is for repeatedly forming a textured pattern on the surface of a semiconductor substrate, by means of exposure developing of the resist film. In the method for producing a semiconductor substrate, when forming an etching mask, which is for forming a textured portion on the surface of the semiconductor substrate, by means of photolithographic processing of the resist film, a transfer mask (100), wherein the dimensions of a dot-shaped light-blocking section (104) which is the exposure pattern in the vicinity of a region that overlaps an exposure shot are pre-corrected, is used as a transfer mask.</p> |
