| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GaN-based semiconductor light-emitting element having an SDH structure and a manufacturing method of the same. <P>SOLUTION: A sapphire substrate with a principal plane being (1-102) plane (R-plane), or a GaN substrate with a principal plane being (11-20) plane (A-plane), or an Si substrate with a principal plane being (111) plane is used as a substrate 10. A mesa-shaped protrusion 11 is formed on the substrate 10 by utilizing a mask layer 17, and a current block layer 15 is formed on sides of the mesa-shaped protrusion 11 by utilizing a difference in crystal growth rate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
