发明名称 GATE DRIVE CIRCUIT AND GATE DRIVE METHOD
摘要 <P>PROBLEM TO BE SOLVED: To prevent loss of drive power of a transistor and to speed up a switching time. <P>SOLUTION: A reference waveform Sg' consisting of a reference drive ability level voltage required for driving a junction type transistor 2, and an convolution pulse Sp consisting of a high drive ability level voltage having high driving ability, are generated. The pulse width of the convolution pulse Sp is set with a switching time of the junction type transistor 2 or with a threshold value representing the transition convergence timing of a drain potential VD. The reference waveform Sg' and the convolution pulse Sp are convoluted together, which is taken as a gate drive signal Sg of the junction type transistor 2. Since the gate drive signal Sg is switched to the reference drive ability level voltage at such timing as can be assumed to be transition completion of the junction type transistor 2, occurrence of power loss is avoided, which is accompanied by flowing of a forward current through a diode formed in the junction type transistor 2, caused by the fact that it is driven at the high drive ability level voltage even after completion of transition. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012060514(A) 申请公布日期 2012.03.22
申请号 JP20100203259 申请日期 2010.09.10
申请人 ASAHI KASEI ELECTRONICS CO LTD;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY;UNIV OF YAMANASHI 发明人 SAOTOME ISAO;NAKAMURA ISAMU;TANAKA YASUNOBU;YAO TSUTOMU;YANO KOJI
分类号 H03K17/04;H02M1/08;H03K17/687 主分类号 H03K17/04
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