| 摘要 |
<P>PROBLEM TO BE SOLVED: To detect a defect in a mask with high sensitivity by acquisition of a dark field image without generating a pseudo defect. <P>SOLUTION: In a method for inspecting presence/absence of a defect in a mask for semiconductor exposure, an optical system is used for making light of an arbitrary wavelength incident on the mask to acquire the dark field image, and an arbitrary partial area where an even dark field image is obtained on the mask is arranged at a defocus position separated from a just-focus position to acquire an image. Signal intensity of the acquired image of the partial area and an area ratio between a desired inspection area and the partial area are used to determine a detection threshold so that the number of signals showing signal intensity equal to or more than the detection threshold becomes equal to or less than the target number of pseudo defects in the desired detection area. Then, the mask is arranged near the just-focus position to acquire an image of the desired inspection area. Then, a signal showing the signal intensity of the acquired image which is equal to or more than the detection threshold is determined as the defect in the desired inspection area. <P>COPYRIGHT: (C)2012,JPO&INPIT |
