| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the breakdown voltage of a semiconductor device. <P>SOLUTION: A semiconductor device comprises: a drift region selectively provided in a drain layer from the surface to the inside thereof; a base region selectively provided in the drift region from the surface to the inside thereof; a source region selectively provided in the base region from the surface to the inside thereof; a trench-shaped gate electrode that penetrates through the base region adjacent to a portion of the source region from a portion of the source region and reaches a portion of the drift region in the direction substantially parallel to a principal surface of the drain layer; a contact region that contains an impurity in a higher concentration than the impurity concentration of the base region and is selectively provided on the surface of the drift region; a drain electrode connected to the drain layer; and a source electrode connected to the source region and the contact region. The contact region extends toward the drift region from the drain layer side, but does not contact the drain layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
