发明名称 |
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THEREOF, AND METHOD OF MANUFACTURING BASE MATERIAL |
摘要 |
It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.
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申请公布号 |
US2012070919(A1) |
申请公布日期 |
2012.03.22 |
申请号 |
US201113303519 |
申请日期 |
2011.11.23 |
申请人 |
TAKAYAMA TORU;GOTO YUUGO;FUKUMOTO YUMIKO;MARUYAMA JUNYA;TSURUME TAKUYA;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TAKAYAMA TORU;GOTO YUUGO;FUKUMOTO YUMIKO;MARUYAMA JUNYA;TSURUME TAKUYA |
分类号 |
H01L21/20;H01J1/62;H01J63/04;H01L21/28;H01L21/30;H01L21/312;H01L21/318;H01L21/46;H01L21/77;H01L21/84;H01L33/36 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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