发明名称 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THEREOF, AND METHOD OF MANUFACTURING BASE MATERIAL
摘要 It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.
申请公布号 US2012070919(A1) 申请公布日期 2012.03.22
申请号 US201113303519 申请日期 2011.11.23
申请人 TAKAYAMA TORU;GOTO YUUGO;FUKUMOTO YUMIKO;MARUYAMA JUNYA;TSURUME TAKUYA;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TAKAYAMA TORU;GOTO YUUGO;FUKUMOTO YUMIKO;MARUYAMA JUNYA;TSURUME TAKUYA
分类号 H01L21/20;H01J1/62;H01J63/04;H01L21/28;H01L21/30;H01L21/312;H01L21/318;H01L21/46;H01L21/77;H01L21/84;H01L33/36 主分类号 H01L21/20
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