NONVOLATILE MEMORY ARRAY WITH THREE-DIMENSIONAL STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

The present invention provides a resistance variable memory array with a three-dimensional structure and a manufacturing method thereof, which fall into the nonvolatile memory technology field of the super-large-scale integration manufacturing technology. The resistance variable memory array with a three-dimensional structure in the present invention comprises a substrate, a bottom electrode/isolation dielectric stack structure, a deep groove etched in the bottom electrode/isolation dielectric stack structure, a resistance variable material and a top electrode layer deposited on the side wall of the deep groove. The bottom electrode and the top electrode are crossed on the side wall of the deep groove. Between crossing points the resistance variable material is set, each forming a resistance variable memory unit. All the resistance variable memory units form a three dimensional resistance variable memory array, where the three-dimensional resistance variable memories are isolated by the isolation dielectric layer. The present invention can increase storage density of resistance variable memory, simplify the process, and reduce processing cost.