发明名称 |
COMPOSITION FOR ADVANCED NODE FRONT - AND BACK-END OF LINE CHEMICAL MECHANICAL POLISHING |
摘要 |
A highly dilutable chemical mechanical polishing concentrate comprises an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2 - 3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates. A transistor is polished with the slurry, wherein the slurry comprises an abrasive, an acid, a stabilizer, and water. The transistor comprises a polysilicon gate, a hardmask over the polysilicon gate, an etch stop layer over the hardmask, and a dielectric layer over the etch stop layer. The polishing concentrate is used to polish the dielectric layer, the etch stop layer, the hardmask, and the polysilicon gate with the slurry. At least one of the layers is silicon carbide and at least one of the layers is a silica material. |
申请公布号 |
WO2012003082(A3) |
申请公布日期 |
2012.03.22 |
申请号 |
WO2011US39902 |
申请日期 |
2011.06.10 |
申请人 |
FUJIFILM PLANAR SOLUTIONS;HU, BIN;SINGH, ABHISHEK;MOYAERTS, GERT;MAHULIKAR, DEEPAK;WEN, RICHARD |
发明人 |
HU, BIN;SINGH, ABHISHEK;MOYAERTS, GERT;MAHULIKAR, DEEPAK;WEN, RICHARD |
分类号 |
C09K13/00 |
主分类号 |
C09K13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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